The E1-E2 center in gallium arsenide is the divacancy.
نویسنده
چکیده
Based on defect energy levels computed from first-principles calculations, it is shown the E1-E2 center in irradiated GaAs cannot be due to an isolated arsenic vacancy. The only simple intrinsic defect with levels compatible with E1 and E2 is the divacancy. The arsenic monovacancy is reassigned to the E3 center in irradiated GaAs. These new assignments are shown to reconcile a number of seemingly contradictory experimental observations.
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عنوان ژورنال:
- Journal of physics. Condensed matter : an Institute of Physics journal
دوره 27 7 شماره
صفحات -
تاریخ انتشار 2015